期刊刊名：吳鳳學報 　 卷期：18期

篇名出版日期：2010年12月1日

作者：Tse-Heng Chou, Jin-Shuh Hsieh, Chun-Yu Lin, Chi-Ying Liang, Kok-Wan Tay, R.T.C.,周澤亨,謝金樹,林俊昱,梁志穎,戴國圓,陳榮宗

語言：English

關鍵字：homojunction,ultraviolet (UV),photodetector,silicon (Si),氮化碳化矽,同質接面,紫外線,光偵測器,矽

被點閱次數：3次

閱讀時間：17sec

摘要：
In this work, low cost and high temperature ultraviolet (UV) detecting performances based on n-SiCN/i-SiCN/p-SiCN homojunction on p-type (100) silicon substrate were demonstrated. The current ratio of the homojunction are 3180 and 150.26 under -5 V bias, at 25 °C and 175 °C, respectively. Compared to the reported UV detectors with 4H-SiC or AlGaN, the developed homojunction has the better current ratio in both room and high temperature.

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