期刊刊名：科學與工程技術期刊 　 卷期：2卷3期

篇名出版日期：2006年9月1日

作者：CHIH-CHIN YANG,楊誌欽

語言：English

關鍵字：InAs,hetero-structure,MOCVD,strained layer,砷化銦,異質結構,有機氣相磊晶法,應力層

被點閱次數：9次

閱讀時間：157sec

摘要：
The interface between GaAs and InAs layers possesses good hetero-structure epitaxial growth by using MOCVD (metal organic chemical vapor deposition) method. The main peak of an InAs X-ray is sharp, the full-width half-maximum (FWHM) being narrow for the V/III ratio near 75, at only about 0.342°. A Laue pattern and a scanning electron microscopy image both show the InAs layer grown on a GaAs layer with a single crystalline structure. The i-GaAs buffer layer is grown on a (100) semi-insulated GaAs substrate at 600°C at a mole fraction ratio of group V to group III with an optimum of 100. The growth rate of the GaAs layer is 0.11µm/min. The n-like InAs layer formed as a high-strained layer is also grown on the GaAs buffer layer at a substrate temperature of 600°C by a V/III mole fraction ratio with an optimum of 75. Consequently, the growth time of the InAs layer cannot exceed 20 minutes. The growth rate of the InAs layer is about 0.12 mm/min at a growth temperature of 600°C. A carrier concentration of 2×1017/cm3 and a Hall mobility of 2×103cm2/V-sec were obtained for an undopant n-like InAs prepared on a GaAs substrate at a growth temperature of 600°C at a group V/III ratio of 75.

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