期刊刊名：科學與工程技術期刊 　 卷期：3卷3期

篇名出版日期：2007年9月1日

作者：JUN-DAR HWANG,GWO-HUEI YANG,NAI-WEI XU,YOU-XIN GUO,ZHENG-HONG ZHANG,RONG-YUAN LI ,CHIEN-MAO CHAN,黃俊達,楊國輝,許乃偉,郭侑鑫,張正弘,李容原,詹前茂

語言：English

關鍵字：photocurrent,photo-electro-chemical etching,GaN,Deuterium lamp,光電化學蝕刻,氮化鎵,氚氣燈

被點閱次數：3次

閱讀時間：316sec

摘要：
In this research, room-temperature photo-electro-chemical etching (PEC) of n-type GaN films by using potassium hydroxide (KOH), pH=12.60-12.90, and phosphorus acid (H3PO4), pH=1.09-1.39, in a stirred solution under deuterium-lamp illumination was achieved. The process provides anisotropic etching profiles and high etching rates of more than 240 nm/min at moderate light intensities of ~17.3 mW/cm2 with 237 nm in an H3PO4 (pH=1.09) solution. The etching rate and photocurrents are characterized at various concentrations of stirred solutions.

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