期刊刊名：科學與工程技術期刊 　 卷期：7卷2期

篇名出版日期：2011年6月1日

作者：SHIH-FONG LEE,LI-YING LEE,YUNG-PING CHANG,李世鴻,李麗英,張永平

語言：English

關鍵字：carbon nanotubes (CNTs),field emission,thermal chemical vapor deposition (thermal CVD),silicon nanowires (SiNWs),奈米碳管,場發射,熱化學氣相沉積,矽奈米絲

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摘要：
In this study, carbon nanotubes (CNTs) were synthesized on Si nanowires (SiNWs) using thermal chemical vapor deposition. SiNWs were directly synthesized onto Si substrates through a solid-liquid-solid (SLS) phase growth mechanism at elevated temperatures. The growth temperature for CNT was 900 °C at an ambient pressure. Methane and argon gases were used for CNT synthesis. In this study, scanning electron microscopy (SEM) and transmission electron microscopy (TEM) images were used to observe the surface morphology and sidewall structure, and Raman spectroscopy was employed to investigate the structure of CNTs. The carbon nanotubes grown on SiNWs demonstrated a multiwalled structure with defective graphite sheets in the wall. Raman spectra determined the SiNW carbon nanotubes had poor crystallinity, or more amorphous carbon, than those grown on plain Si substrate. Compared with CNTs grown on flat silicon substrates, CNTs grown on SiNWs exhibit superior field emission characteristics. The Fowler-Nordheim plot displayed a good linear fit, indicating the emission current of carbon nanotubes follows a Fowler-Nordheim behavior.

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