期刊刊名：南台學報 　 卷期：34卷4期

篇名出版日期：2009年12月2日

作者：Hsyi-En Cheng,Chung-Ho Lai,Chien-Lung Huang,鄭錫恩,賴忠和,黃建龍

語言：English

關鍵字：透明導電膜,氧化銦錫,濺鍍,結構性質,Transparent conducting film, ITO, Sputtering, Structural properties

被點閱次數：3次

閱讀時間：12sec

摘要：
Indium-tin-oxide (ITO) films were grown by DC sputtering at room temperature. The effects of target-substrate distances, sputtering pressures, and substrate inclination angles on the film properties were investigated. The results show that optimum film quality occurs at a deposition condition of short target-substrate distance, low pressure, and normal incidence. At such a condition, the deposited films are dense, smooth, and crystalline, with a preferred orientation of (100). The preferred orientation was found related to the energy and direction of incident material flux. Under a high energy bombardment, only those crystals with (100) planes facing the incident flux can survive. As the substrates were at the normal position, the deposited ITO films were with (100) preferred orientation. As the substrates were tilted, the preferred orientation changed from (100) to (111) with the increase of substrate inclination angle.

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