期刊刊名：南台學報 　 卷期：35卷1期

篇名出版日期：2010年5月1日

作者：Mei-Li Chen,陳美利

語言：English

關鍵字：參材質堆疊雙閘極金氧半場效電晶體,熱載子效應,短通道臨界電壓衰變,短通道效應, Tri-Material Gate Stack Double Gate MOSFET, Hot-electron effects , Threshold voltage degradation, Short- channel effects

被點閱次數：2次

閱讀時間：19sec

摘要：
Based on resultant solution of two-dimensional (2-D) Poisson's equation in the subthreshold regime, an analytical model consisting of two-dimensional potential, threshold voltage, subthreshold current and subthreshold swing for the fully depleted symmetrical tri-material gate stack double-gate (STMGSDG) MOSFET has been developed. The model is verified in good agreement with numerical simulation results over a wide range of the device parameters. The model not only offers the physical insight into device physics but also provides the basic designing guidance for the device.

　　　　　[全文下載]