期刊刊名：吳鳳學報 　 卷期：20期

篇名出版日期：2012年7月20日

作者：Tse-Heng Chou,Fu-Shun Lai,Jin-Shuh Hsieh

語言：English

關鍵字：homojunction, detector, ultraviolet (UV), SiCN, RTCVD

被點閱次數：7次

閱讀時間：823sec

摘要：
In this work, we report a novel n-SiCN/p-SiCN homojunction developed on Si substrate for low cost and high temperature ultraviolet detecting applications. The photo/dark current ratio of the junction under -5 volt bias, with and without irradiation of 254 nm UV light are 1940, and 121.1 at room temperature (25℃), and at 125 ℃, respectively. Compared to the reported UV detectors with 4H-SiC or β-SiC, the developed n-SiCN/p-SiCN homojunction has better photo/dark current ratio in both room and elevated temperature.

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