期刊刊名：南台學報 　 卷期：38卷3期

篇名出版日期：2013年9月1日

作者：王俊凱,簡瑋辰,鄭杰晰,Chun-Kai Wang, Wei-Chen Jane, Jie-Si Jheng

語言：English

關鍵字：GaN, LED, Current Blocking Layer, Current Spreading,氮化鎵,發光二極體,電流阻擋層,電流散佈

被點閱次數：2次

閱讀時間：24sec

摘要：
In this study, nitride-based light emitting diodes (LEDs) with different current blocking layer (CBL) width are used to elucidate the relationship between injection current density and internal quantum efficiency (IQE). The results indicate that the efficiency droop is improved in the LED with wider CBL region at a higher current density. This is due to superior current spreading. Better current spreading not only increases the effective emitting area but also improves the effective injection current density. In addition, the operating temperature of the LED with the wider CBL region is lower than the others due to the reduction in the current crowding effect.

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