期刊刊名：修平學報 　 卷期：38期

篇名出版日期：2019年3月1日

作者：Chien-Cheng Yu, Ming-Chuen Shiau,余建政,蕭明椿

語言：English

關鍵字：Two-port, Assist circuit, Single-ended, Static random access memory, Read- write control circuit,雙埠,寫入操作,靜態隨機存取記憶體,讀寫控制電路

被點閱次數：2次

閱讀時間：32sec

摘要：
In this paper, a novel seven-transistor (7T) two-port SRAM cell incorporating an assist circuit is proposed. Wherein, the assist circuit is used to deal with the memory cell failures. During a write operation, this circuit is activated to connect a diode-connected transistor to the source of the drive transistor located near to the write bit line. Accordingly, it can provide an efficient solution to the writing ‘1’ issue to improve write operations in this manner. Simulation results for the proposed cell design confirm that there is a conspicuous improvement over the conventional two-port SRAM cells, and fast writing also can be achieved.

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