期刊刊名：大葉學報 　 卷期：12卷1期

篇名出版日期：2003年6月1日

作者：王木俊,陳厚銘,蔡政村,洪進華,MU-CHUN WANG,HOU-MING CHEN,CHENG-TSUN TSAI,JIN-HUA HONG

語言：English

關鍵字：plasma process, damage, oxide, reliability, antenna, differential amplifier,電漿製程,損傷,氧化層,可靠度,天線,差動放大器

被點閱次數：0次

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摘要：
Plasma-process-induced damage (PPID) in the semiconductor process is a common phenomenon influencing gate-oxide reliability and circuit performance. How to reduce this effect to an acceptable level is a key issue in recent semiconductor manufacturing. In this paper, a differential amplifier circuit plus designed antenna test patterns to powerfully detect this plasma impact on gate-oxide integrity is proposed. In circuit simulation, the degree of the charging effect in the process from a different back-end metal or via layers on gate-oxide reliability can be effectively gauged. This valuable information can be returned to the process engineers to optimally adjust the plasma process if certain circuit products request a precise and excellent device performance. Key Words: plasma process, damage, oxide, reliability, antenna, differential amplifier

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