期刊刊名：吳鳳學報 　 卷期：18期

篇名出版日期：2010年12月1日

作者：Tron-Min Chen, Kai-Min Uang, Wen-Chih Wu, Shui-Jinn Wang,陳聰敏,汪楷茗,吳文誌,王水進

語言：English

關鍵字：FinFET,VTsat,short channel effects,drain induced barrier lowing,subthreshold swing,on-to-off current ratio,鰭形場效電晶體,飽和門檻電壓,短通道效應,汲極引發能障降低,次臨界導通斜率,電流開-關比

被點閱次數：2次

閱讀時間：31sec

摘要：
A triple gates fin field effect transistor (FinFET) simulation is presented. The theoretical study is focused on the three dimension (3D) device design and simulation of FinFET with different gate length (Lgate), FinFET height (Hfin), and channel thickness (Tfin). Electrical characteristics of deep submicron FinFETs including threshold voltage saturation (VTsat), drain induced barrier lowing (DIBL), subthreshold swing (SS), and on-to-off current ratio are analyzed. Special emphasis is focused on optimization of device design and suppression of short channel effects (SCEs). It is showed that the device and fabrication technology to be developed in the present work will be successfully applicable to the realization of FinFETs with low DIBL(

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