期刊刊名：吳鳳學報 　 卷期：19期

篇名出版日期：2011年12月1日

作者：Tse-Heng Chou, Jin-Shuh Hsieh

語言：English

關鍵字：heterojunction, ultraviolet (UV), porous silicon (PS), SiCN, RTCVD

被點閱次數：3次

閱讀時間：553sec

摘要：
In this work, we report a comparative study of both lateral n-SiCN/p-porous silicon and vertical n-SiCN/p-porous silicon heterojunctions for low cost and high temperature ultraviolet (UV) detecting applications. The porous silicon (PS) layer has the features of high resistivity and the flexibility, thus suppresses the dark current of the optical sensing device at high temperature. The cubic crystalline n-SiCN films were deposited on p-(100) PS substrate with rapid thermal chemical vapor deposition (RTCVD). In room temperature, the measured photo/dark current ratio of the lateral n-SiCN/p-PS and vertical n-SiCN/p-PS heterojunctions with and without irradiation of 254 nm UV light, under –5 V bias and 0.5 mW/cm² are 98.2 and 84.6, respectively. The ratios are decreased to 17.6 and 14.1 at 150 °C, respectively. The results are better than that of reported SiCN or ß-SiC UV detector on Si substrate without porous treatment.

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