期刊刊名：大葉學報 　 卷期：13卷1期

篇名出版日期：2004年6月1日

作者：MU-CHUN WANG, HOU-MING CHEN, CHENG-TSUN TSAI, YUNG-CHEN CHEN,LIANG-TE LU,王木俊,陳厚銘,蔡政村,陳永珍,呂良德

語言：English

關鍵字：integrity, gate oxide, kink effect, auto testing,品質,氧化層,捲縮效應,自動量測

被點閱次數：5次

閱讀時間：71sec

摘要：
In a submicron or deep submicron process era, the integrity of metal-oxide-semiconductor field-effect transistor (MOSFET) is more and more strictly requested. As the generic process development is launched or the mass- production line has some variation, the gate oxide quality under gate electrode is sometimes uncontrolled. Therefore, the device characteristics depict abnormal behaviors such as the kink effect. How to detect this phenomenon and analyze the failure distribution in a wafer or in a wafer lot is a big issue. Here, a method of testing a transistor with second derivative of a numerical method as an electrical prober is proposed. Furthermore, this testing algorithm can be effectively implemented into an auto testing program to probe whether the tested MOSFET transistors have the hump situation. Then, the researchers or the process engineers can utilize this useful information to seek some solutions to overcome that. This test method shows that it is a helpful assistant in monitoring a quality device.

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